TaC қапталған кеуекті графит

Semixlab’s Tantalum Carbide (TaC) Coated Porous Graphite Ring (Tantalum carbide coated porous Graphite Ring) is a high-performance graphite component specially designed for the growth of silicon carbide (SiC) single crystals. This product is made of high-purity porous graphite substrate and coated with a high-temperature resistant and corrosion-resistant tantalum carbide (TaC) coating on the surface. It features excellent thermal shock resistance, chemical stability and a long service life, and is a key consumable in the SiC single crystal growth furnace (PVT method).

Өнімнің мүмкіндіктері

1. High-purity porous graphite substrate

Ultra-high purity (≥99.9999%) isostatic graphite is adopted, with controllable porosity, ensuring good thermal uniformity and gas permeability, and optimizing the growth environment of SiC single crystals.

Low ash content and low impurities, reducing the risk of contamination during the crystal growth process.

2. Tantalum carbide (TaC) coating protection

TaC coating features an extremely high melting point (~3880℃) and excellent chemical inertness, effectively preventing graphite from reacting with Si/C vapor at high temperatures and reducing the shedding of graphite particles to contaminate the crystals.

The coating is dense and uniform, significantly enhancing the oxidation resistance and corrosion resistance of the graphite ring and prolonging its service life.

3. Тамаша термиялық тұрақтылық

It has a low coefficient of thermal expansion and strong thermal shock resistance, making it suitable for rapid temperature rise and fall during the growth process of SiC single crystals (above 2000℃).

High thermal conductivity ensures uniform thermal field distribution and improves the quality of crystal growth.

4. Арнайы дизайн

The pore size, porosity, dimension of the graphite ring and the thickness of the TaC coating can be adjusted according to customer requirements to adapt to different types of SiC crystal growth furnaces (such as induction heating or resistance heating types).

Қысқаша мәліметтер:

Nicknames: Porous graphite,TaC coated porous graphite ring,graphite ring,Tantalum carbide coating porous graphite ring,porous graphite ring for SiC crystal growth

Purpose: Ensure the stable deposition of high-quality films in the PECVD process, while maximizing the production efficiency of the equipment and the yield of wafers.

Core parameters: Porosity: 10%-30%, coating material: TaC coating, coating thickness: 30±5um, maximum service temperature: 2200℃ (inert/vacuum environment), purity ≥99.9999%, coefficient of thermal expansion ≤5×10⁻⁶/K (room temperature - 2000℃)

Техникалық параметрлер

Қолдану сценарийлері

● SiC single crystal growth (PVT method) : As a crucible component or thermal field component, it is used for the sublimation and crystal deposition of SiC raw materials in high-temperature environments.

● Preparation of other high-temperature semiconductor materials: such as crystal growth processes for wide bandgap semiconductors like GaN and AlN.

● Long service life: 

TaC coating significantly reduces graphite loss, lowers replacement frequency and saves costs.

● High crystal quality: 

Reduce particle contamination and enhance the purity and crystalline integrity of SiC single crystals.

● Reliable supply: 

A strict quality control system ensures batch consistency and supports large-scale production demands.

● Service support:

Provide technical consultation, thermal field design optimization and after-sales tracking services.

Support non-standard customization to meet special process requirements.

● Applicable customers: 

SiC substrate manufacturers, semiconductor equipment manufacturers, research institutions, etc.

For further information or sample testing, please contact us!